Title :
Very high gain Nd:YLF amplifiers
Author :
Knights, M.G. ; Thomas, M.D. ; Chicklis, E.P. ; Rines, G.A. ; Seka, W.
Author_Institution :
Sanders Associates, Nashua, NH, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
High-gain Nd:YLF rod amplifiers in which single-pass, small signal gains of over 1700 have been obtained along with stored energy densities >or=0.4 J/cm/sup 2/ are discussed. The ability of Nd:YLF amplifiers to support such gains is a result of high parasitic oscillation thresholds, due primarily to the low refractive index of the material. These results suggest that Nd:YLF is an excellent candidate for amplifiers where high specific stored energies and/or very high gains are required.<>
Keywords :
neodymium; semiconductor junction lasers; LiYF4:Nd; Nd:YLF amplifiers; YLF:Nd; amplifiers; parasitic oscillation thresholds; refractive index; signal gains; stored energy densities; Crystals; Gain measurement; Neodymium; Optical amplifiers; Optical refraction; Optical saturation; Optical variables control; Pulse amplifiers; Pulse measurements; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
