• DocumentCode
    834415
  • Title

    Very high gain Nd:YLF amplifiers

  • Author

    Knights, M.G. ; Thomas, M.D. ; Chicklis, E.P. ; Rines, G.A. ; Seka, W.

  • Author_Institution
    Sanders Associates, Nashua, NH, USA
  • Volume
    24
  • Issue
    5
  • fYear
    1988
  • fDate
    5/1/1988 12:00:00 AM
  • Firstpage
    712
  • Lastpage
    715
  • Abstract
    High-gain Nd:YLF rod amplifiers in which single-pass, small signal gains of over 1700 have been obtained along with stored energy densities >or=0.4 J/cm/sup 2/ are discussed. The ability of Nd:YLF amplifiers to support such gains is a result of high parasitic oscillation thresholds, due primarily to the low refractive index of the material. These results suggest that Nd:YLF is an excellent candidate for amplifiers where high specific stored energies and/or very high gains are required.<>
  • Keywords
    neodymium; semiconductor junction lasers; LiYF4:Nd; Nd:YLF amplifiers; YLF:Nd; amplifiers; parasitic oscillation thresholds; refractive index; signal gains; stored energy densities; Crystals; Gain measurement; Neodymium; Optical amplifiers; Optical refraction; Optical saturation; Optical variables control; Pulse amplifiers; Pulse measurements; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.186
  • Filename
    186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834415