• DocumentCode
    834488
  • Title

    1300-V 6H-SiC lateral MOSFETs with two RESURF zones

  • Author

    Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.

  • Author_Institution
    Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    23
  • Issue
    10
  • fYear
    2002
  • Firstpage
    624
  • Lastpage
    626
  • Abstract
    A two-zone, lateral RESURF field 6H-SiC MOSFET with breakdown voltage as high as 1300 V and specific on-resistance of 160 m/spl Omega//spl middot/cm/sup 2/ has been fabricated. These MOSFETs exhibit stable and reversible breakdown indicating avalanche breakdown in SiC that has not been reported in earlier lateral SiC MOSFETs.
  • Keywords
    avalanche breakdown; power MOSFET; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 1300 V; 6H-SiC lateral MOSFETs; SiC; avalanche breakdown; breakdown voltage; power MOSFET; reduced surface field; specific on-resistance; stable reversible breakdown; two RESURF zones; two-zone lateral RESURF field MOSFET; Avalanche breakdown; Breakdown voltage; Doping; Electric breakdown; Implants; Logic devices; MOSFETs; Monolithic integrated circuits; Silicon carbide; Silicon devices;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2002.803768
  • Filename
    1039188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834488