DocumentCode :
834554
Title :
A Simple Model for Predicting Radiation Effects in MOS Devices
Author :
Freeman, Roger ; Holmes-Siedle, Andrew
Author_Institution :
Fulmer Research Institute Limited, Stoke Poges, Slough, SL2 4QD, England
Volume :
25
Issue :
6
fYear :
1978
Firstpage :
1216
Lastpage :
1225
Abstract :
A mathematical model for the electrical consequence of charge buildup in metal-oxide-semiconductor devices has been investigated and found to be useful. It can be used (a) for comparing experimental data from different sources and (b) for making predictions of the lifetime of MOS circuits exposed to radiation in space or laboratory environments. A wide range of experimental data has been collected together and is presented in the form of a normalised oxide radiation-sensitivity parameter A, representing the probability of hole capture. The results show that the simple model, based upon a thin sheet of hole traps, must be modified when the rate of interface-state creation is commensurate with the trap filling rate but that this does not destroy its usefulness for a wide range of applications.
Keywords :
Electron traps; Guidelines; MOS devices; MOSFETs; Mathematical model; Predictive models; Radiation effects; Silicon compounds; Testing; Threshold voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1978.4329516
Filename :
4329516
Link To Document :
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