An integrated-circuit reliability simulator-RELY

Author

Sheu, Bing J. ; Hsu, Wen-jay ; Lee, Bang W.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

24

Issue

2

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

473

Lastpage

477

Abstract

A prototype very-large-scale integrated circuit (VLSI) reliability simulator is described. Software modules for hot-carrier effects have been developed. Popular substrate current models are implemented in the simulator. Experiments were performed to establish the relationship between transistor model parameter changes and the substrate current level. The circuit reliability simulation techniques can be extended to include dielectric breakdown and interconnect electromigration effects.<>

Keywords

VLSI; circuit analysis computing; circuit reliability; hot carriers; integrated circuit technology; semiconductor device models; RELY; VLSI; circuit reliability simulation techniques; dielectric breakdown; hot-carrier effects; integrated-circuit; interconnect electromigration; reliability simulator; software modules; substrate current level; substrate current models; transistor model parameter changes; very-large-scale integrated circuit; Circuit simulation; Dielectric breakdown; Dielectric substrates; Electromigration; Hot carrier effects; Integrated circuit interconnections; Integrated circuit reliability; Software prototyping; Very large scale integration; Virtual prototyping;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.18612

Filename

18612