Title :
A bipolar ECL static RAM using polysilicon-diode loaded memory cell
Author :
Hwang, Bor-yuan ; Bushey, Thomas P. ; Kirchgessner, James A. ; Foertsch, Samuel A. ; Stipanuk, James J. ; Marshbanks, Larry ; Hernandez, Juan A. ; Herald, Eric R.
Author_Institution :
Motorola Inc., Mesa, AZ, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
A 1 K*1 bipolar ECL (emitter-coupled logic) static RAM using polysilicon-diode loaded memory cell is realized in a single-poly bipolar process technology. The use of the polysilicon diode as the load element for the memory cell is made possible by the fact that its I-V characteristics exhibit an ideality factor of two. The hold voltage for the memory cell is larger than 240 mV over a wide range of cell currents with the lower bound residing in the submicroampere range. Results show extremely stable operation against row-select sensitivity. A 1.5-ns row address access time has been obtained from the test circuit.<>
Keywords :
bipolar integrated circuits; emitter-coupled logic; integrated memory circuits; random-access storage; 1 kbit; 1.5 ns; 240 mV; ECL; SRAM; emitter-coupled logic; hold voltage; memory IC; polycrystalline Si; polysilicon-diode loaded memory cell; row address access time; row-select sensitivity; single-poly bipolar process technology; stable operation; static RAM; Boron; Circuit testing; Electrodes; Random access memory; Read-write memory; Resistors; Resists; Schottky diodes; Semiconductor diodes; Stability;
Journal_Title :
Solid-State Circuits, IEEE Journal of
