Title :
An accurate MESFET model for linear and microwave circuit design
Author :
Scheinberg, Norman ; Bayruns, R.J. ; Wallace, Phillip W. ; Goyal, R.
Author_Institution :
Anadigics Inc., Warren, NJ, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
A MESFET model has been presented in a form suitable for implementation in a circuit analysis program such as SPICE. This model accurately predicts I/sub DS/ and its partial derivatives over all terminal voltages from DC to several gigahertz. The nonlinear capacitances C/sub GS/ and C/sub GD/ are also included in the model. Secondary effects often ignored in other models have been included by adding additional terms and parameters to the equations.<>
Keywords :
Schottky gate field effect transistors; circuit CAD; circuit analysis computing; linear network synthesis; semiconductor device models; solid-state microwave circuits; MESFET model; SPICE; circuit analysis program; linear circuit design; microwave circuit design; nonlinear capacitances; secondary effects; Circuit analysis; Circuit synthesis; Equations; Frequency; Gallium arsenide; Impedance; MESFET circuits; SPICE; Transconductance; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
