Title :
The effects of oxide traps on the large-signal transient response of analog MOS circuits
Author :
Tewksbury, Theodore L. ; Lee, Hae-Seung ; Miller, Gerald A.
Author_Institution :
Analog Devices Inc., Wilmington, MA, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
Hysteresis in the threshold voltage of MOSFETs due to oxide traps is discussed, which can impose serious limitations on the accuracy and speed of analog circuits. The measured magnitude of the input-referred hysteresis ranges from 100 mu V to more than 1 mV in NMOS devices stressed with positive gate-source voltages ranging from 1 to 5 V on microsecond-to-millisecond time scales. This hysteresis is explained by a model in which electrons tunnel to oxide traps close to the interface.<>
Keywords :
MOS integrated circuits; electron traps; hysteresis; linear integrated circuits; transient response; tunnelling; 100 muV to 1 mV; MOSFETs; NMOS devices; analog MOS circuits; electron tunnelling; large-signal transient response; model; monolithic IC; oxide traps; positive gate-source voltages; threshold voltage hysteresis; Analog circuits; Differential amplifiers; Electron traps; Frequency; Hysteresis; Operational amplifiers; Switching converters; Transient response; Tunneling; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
