DocumentCode
834667
Title
The effects of oxide traps on the large-signal transient response of analog MOS circuits
Author
Tewksbury, Theodore L. ; Lee, Hae-Seung ; Miller, Gerald A.
Author_Institution
Analog Devices Inc., Wilmington, MA, USA
Volume
24
Issue
2
fYear
1989
fDate
4/1/1989 12:00:00 AM
Firstpage
542
Lastpage
544
Abstract
Hysteresis in the threshold voltage of MOSFETs due to oxide traps is discussed, which can impose serious limitations on the accuracy and speed of analog circuits. The measured magnitude of the input-referred hysteresis ranges from 100 mu V to more than 1 mV in NMOS devices stressed with positive gate-source voltages ranging from 1 to 5 V on microsecond-to-millisecond time scales. This hysteresis is explained by a model in which electrons tunnel to oxide traps close to the interface.<>
Keywords
MOS integrated circuits; electron traps; hysteresis; linear integrated circuits; transient response; tunnelling; 100 muV to 1 mV; MOSFETs; NMOS devices; analog MOS circuits; electron tunnelling; large-signal transient response; model; monolithic IC; oxide traps; positive gate-source voltages; threshold voltage hysteresis; Analog circuits; Differential amplifiers; Electron traps; Frequency; Hysteresis; Operational amplifiers; Switching converters; Transient response; Tunneling; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.18621
Filename
18621
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