• DocumentCode
    834898
  • Title

    Radiation Effects on GaAs MESFETs

  • Author

    Borrego, Jose M. ; Gutmann, Ronald J. ; Moghe, Sanjay B. ; Chudzicki, Mark J.

  • Volume
    25
  • Issue
    6
  • fYear
    1978
  • Firstpage
    1436
  • Lastpage
    1443
  • Abstract
    The effect of fast neutron and gamma radiation on the electrical characteristics of commercial 1 ¿m and 4 ¿m low noise GaAs MESFET has been evaluated. The change in the microwave scattering parameters at 2 to 4 GHz (S-band), 1 MHz equivalent circuit parameters, DC characteristics and low frequency input noise equivalent voltage from 2 KHz to 1.5 MHz was determined at neutron fluences between 5 × 1013 to 8 × 1014 n/cm2 and gamma doses of up to 8 × 107 rads (Si). These radiation induced changes are described and causes for these changes are discussed.
  • Keywords
    Circuit noise; Electric variables; Equivalent circuits; Gallium arsenide; Gamma rays; Low-frequency noise; MESFETs; Neutrons; Radiation effects; Scattering parameters;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1978.4329549
  • Filename
    4329549
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834898