• DocumentCode
    834944
  • Title

    DC-20 GHz CMOS LNA using novel multilayered transmission lines and inductors

  • Author

    Chirala, M.K. ; Guan, X. ; Nguyen, C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas A&M Univ., TX
  • Volume
    42
  • Issue
    22
  • fYear
    2006
  • Firstpage
    1273
  • Lastpage
    1274
  • Abstract
    A distributed low-noise amplifier (LNA) employing novel multilayered transmission lines and inductors is designed in a standard 0.18 mum CMOS process. The new LNA provides significant improvement in performance and size with less than 13 dB return loss from DC to 17 GHz, average gain of 8plusmn0.2 dB from DC to 20 GHz, noise figure of 3.4-5 dB from 0.5-19 GHz, power consumption of 34.2 mW, and 1.05times0.37 mm 2 chip size including RF pads
  • Keywords
    CMOS integrated circuits; MMIC amplifiers; distributed amplifiers; inductors; low noise amplifiers; transmission lines; 0.18 micron; 0.5 to 19 GHz; 20 GHz; 3.4 to 5 dB; 34.2 mW; CMOS; low-noise amplifier; multilayered inductors; multilayered transmission lines; power consumption;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20062569
  • Filename
    4015912
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834944