DocumentCode
834948
Title
Radiation-Hardened CMOS Devices for Linear Circuit Applications
Author
Sanders, T.J. ; Ports, K.A.
Author_Institution
Harris Semiconductor Melbourne, Fla
Volume
25
Issue
6
fYear
1978
Firstpage
1465
Lastpage
1468
Abstract
In the past, the use of MOS devices in a radiation environment has normally been restricted to applications requiring a 15 volt power supply or less. This paper discusses a new process for manufacturing high-voltage (30 volt) radiation-hardened CMOS devices for linear circuit applications. Devices have been fabricated which demonstrate hardness above 2 Mrads(Si). This paper also discusses necessary controls and design rules for this process.
Keywords
Aluminum; CMOS process; Fabrication; Immune system; Linear circuits; MOS devices; Plasma temperature; Process control; Resists; Surface resistance;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1978.4329554
Filename
4329554
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