Title :
VLSI Processing, Radiation, and Hardening
Author :
Galloway, Kenneth F.
Author_Institution :
Electron Devices Division National Bureau of Standards Washington, D. C. 20234
Abstract :
Process-induced radiation damage to silicon dioxide films is expected to be commonplace for VLSI circuit fabrication. This might be expected to be most serious for the production of radiation-hardened VLSI. In this paper, the oxide damage due to ion processing is reviewed and the radiation levels associated with advanced lithographic techniques are estimated. Implications for radiation-hardened VLSI circuits are considered.
Keywords :
Circuits; Fabrication; Ionizing radiation; Metallization; NIST; Plasma applications; Plasma chemistry; Plasma materials processing; Radiation hardening; Very large scale integration;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1978.4329555
