• DocumentCode
    834958
  • Title

    VLSI Processing, Radiation, and Hardening

  • Author

    Galloway, Kenneth F.

  • Author_Institution
    Electron Devices Division National Bureau of Standards Washington, D. C. 20234
  • Volume
    25
  • Issue
    6
  • fYear
    1978
  • Firstpage
    1469
  • Lastpage
    1472
  • Abstract
    Process-induced radiation damage to silicon dioxide films is expected to be commonplace for VLSI circuit fabrication. This might be expected to be most serious for the production of radiation-hardened VLSI. In this paper, the oxide damage due to ion processing is reviewed and the radiation levels associated with advanced lithographic techniques are estimated. Implications for radiation-hardened VLSI circuits are considered.
  • Keywords
    Circuits; Fabrication; Ionizing radiation; Metallization; NIST; Plasma applications; Plasma chemistry; Plasma materials processing; Radiation hardening; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1978.4329555
  • Filename
    4329555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=834958