• DocumentCode
    834975
  • Title

    Radiation Hardening of Electron Voltaic Cells

  • Author

    Woodbury, Richard C. ; Van Epps, Richard A. ; Olson, Don I.

  • Volume
    25
  • Issue
    6
  • fYear
    1978
  • Firstpage
    1479
  • Lastpage
    1482
  • Abstract
    This paper contains a report of the performance of several silicon electron-voltaic cells designed for extended life under Sr90-Y90 radiation. Measurements of short circuit current are reported for electron fluence levels up to 1017 e/cm2. Also, an approximate calculation of initial open circuit voltage, short circuit current, and efficiency, is provided for comparison purposes. The essential result of the study is that the silicon electron-vol taic cell, using a Sr90-Y90 source of electrons, can be fabricated to deliver 2 kWh/kg with a life of 3000 hours and with an efficiency of 6-7 percent.
  • Keywords
    Boron; Current measurement; Degradation; Diodes; Electrons; Radiation hardening; Short circuit currents; Silicon; Space charge; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1978.4329557
  • Filename
    4329557