DocumentCode
834992
Title
Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors
Author
Schuller, Ch. ; Höfling, S. ; Forchel, A. ; Etrich, C. ; Iliew, R. ; Lederer, F. ; Pertsch, T. ; Reithmaier, J.P.
Author_Institution
Tech. Phys., Julius-Maximilians-Univ. Wurzburg
Volume
42
Issue
22
fYear
2006
Firstpage
1280
Lastpage
1281
Abstract
Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1 mum were fabricated. The maximum transmittance of a 90deg bend with radius of 2 mum can be enhanced to almost 99% at a wavelength of 1.55 mum, which corresponds to an attenuation factor of 0.05 dB per bend
Keywords
III-V semiconductors; gallium arsenide; integrated optoelectronics; optical waveguides; photonic crystals; 1.55 micron; GaAs; III-V semiconductors; deeply etched photonic wires; gallium arsenide; monolithic integration; photonic wire bends; ultra-small bent waveguides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20062195
Filename
4015916
Link To Document