Title :
Short wavelength (λ =3.5-3.65 μm) InAs/AlSb quantum cascade lasers
Author :
Devenson, J. ; Barate, D. ; Teissier, R. ; Baranov, A.N.
Author_Institution :
Centre d´´Electronique et de Microoptoelectronique de Montpellier, CNRS/Univ. Montpellier
Abstract :
InAs/AlSb quantum cascade lasers emitting at 3.5-3.65 mum are demonstrated. The lasers employ a plasmon enhanced waveguide consisting of heavily doped n-InAs cladding layers and low doped InAs spacers. The maximum operation temperature is 200 and 140 K for lasers emitting near 3.65 and 3.5 mum, respectively. The present lasers´ performances are limited by interband absorption in narrow gap InAs spacers
Keywords :
III-V semiconductors; aluminium compounds; cladding techniques; indium compounds; light absorption; quantum cascade lasers; semiconductor doping; waveguide lasers; 3.5 to 3.65 micron; InAs-AlSb; cladding layers; interband absorption; plasmon enhanced waveguide; quantum cascade lasers; spacers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062640
