Title :
Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications
Author :
Hirata, M. ; Oka, T. ; Hasegawa, M. ; Amano, Y. ; Ishimaru, Y. ; Kawamura, H. ; Sakuno, K.
Author_Institution :
Opto-Analog Devices, Sharp Corp., Tenri Nara
Abstract :
A high linear output power two-stage GaAs heterojunction bipolar transistor (HBT) power amplifier MMIC is reported. The input, interstage and output matching circuits are designed for wideband and low-voltage operations, and are fully integrated into an MMIC chip. The power amplifier measured with 54 Mbits 64-QAM OFDM signals at a collector supply voltage of 3.3 V showed linear output power of higher than 23.2 dBm at an error vector magnitude of 3.0% in a frequency range 3.3-3.6 GHz
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; 3.3 V; 3.3 to 3.6 GHz; 54E6 bit; GaAs; HBT power amplifier; MMIC chip; MMIC power amplifier; QAM OFDM signals; broadband wireless application; heterojunction bipolar transistor; matching circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062404
