• DocumentCode
    835086
  • Title

    High Temperature Schottky TTL Latchup

  • Author

    Cooper, M.S. ; Retzler, J.P. ; Messenger, G.C.

  • Author_Institution
    Litton Guidance & Control Systems Woodland Hills, California 91364
  • Volume
    25
  • Issue
    6
  • fYear
    1978
  • Firstpage
    1538
  • Lastpage
    1544
  • Abstract
    Selected devices of the low power and standard Schottky T2L family were radiation tested at elevated case temperatures to determine if there is a latchup susceptibility. No latchup was observed. Analysis of device circuit topology confirmed that the PNPN paths previously observed to latch in older devices had been redesigned and removed. Comparison was made to devices which did latchup in radiation tests. Case temperature is an important variable. Two devices were found which did not latch at room temperature but did latch at 100°C; two other devices showed a significantly lower latchup threshold at 110°C than at room temperature. This work emphasizes the necessity of performing latchup screens at worst case temperature and bias conditions.
  • Keywords
    Circuit testing; Control systems; Doping; Gold; Latches; P-n junctions; Schottky barriers; Schottky diodes; Temperature distribution; Thyristors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1978.4329568
  • Filename
    4329568