DocumentCode
835086
Title
High Temperature Schottky TTL Latchup
Author
Cooper, M.S. ; Retzler, J.P. ; Messenger, G.C.
Author_Institution
Litton Guidance & Control Systems Woodland Hills, California 91364
Volume
25
Issue
6
fYear
1978
Firstpage
1538
Lastpage
1544
Abstract
Selected devices of the low power and standard Schottky T2L family were radiation tested at elevated case temperatures to determine if there is a latchup susceptibility. No latchup was observed. Analysis of device circuit topology confirmed that the PNPN paths previously observed to latch in older devices had been redesigned and removed. Comparison was made to devices which did latchup in radiation tests. Case temperature is an important variable. Two devices were found which did not latch at room temperature but did latch at 100°C; two other devices showed a significantly lower latchup threshold at 110°C than at room temperature. This work emphasizes the necessity of performing latchup screens at worst case temperature and bias conditions.
Keywords
Circuit testing; Control systems; Doping; Gold; Latches; P-n junctions; Schottky barriers; Schottky diodes; Temperature distribution; Thyristors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1978.4329568
Filename
4329568
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