• DocumentCode
    835102
  • Title

    Parameter Sensitivities for Hardness Assurance Displacement Effects in Bipolar Transistors: Part II

  • Author

    Smyth, John B., Jr. ; Hart, Arthur R. ; Van Lint, Victor A.J.

  • Volume
    25
  • Issue
    6
  • fYear
    1978
  • Firstpage
    1550
  • Lastpage
    1554
  • Abstract
    A worst-case neutron hardness assurance approach is presented that can be implemented by both the manufacturer and user and is in excellent agreement with the-CRIC data over the normal operating range. The limitations of the technique (VCE(SAT) and severe crowding) are pointed out and suggestions are made on how to approach these limitations.
  • Keywords
    Bipolar transistors; Degradation; Doping; Fluctuations; Knowledge engineering; Manufacturing processes; Neutrons; Niobium; Semiconductor process modeling; Systems engineering and theory;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1978.4329570
  • Filename
    4329570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=835102