Title :
Parameter Sensitivities for Hardness Assurance Displacement Effects in Bipolar Transistors: Part II
Author :
Smyth, John B., Jr. ; Hart, Arthur R. ; Van Lint, Victor A.J.
Abstract :
A worst-case neutron hardness assurance approach is presented that can be implemented by both the manufacturer and user and is in excellent agreement with the-CRIC data over the normal operating range. The limitations of the technique (VCE(SAT) and severe crowding) are pointed out and suggestions are made on how to approach these limitations.
Keywords :
Bipolar transistors; Degradation; Doping; Fluctuations; Knowledge engineering; Manufacturing processes; Neutrons; Niobium; Semiconductor process modeling; Systems engineering and theory;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1978.4329570
