• DocumentCode
    835191
  • Title

    AlxGa1-xN=GaN tuned distributed Bragg reflector

  • Author

    Shi, W. ; Feng, Y. ; Chen, H.

  • Author_Institution
    Optoelectron. Inst. of Shenzhen Univ.
  • Volume
    42
  • Issue
    22
  • fYear
    2006
  • Firstpage
    1306
  • Lastpage
    1307
  • Abstract
    A novel design scheme of a tuned distributed Bragg reflector (TDBR) is presented. The layer thicknesses of 20.5-pair AlxGa 1-xN/GaN distributed reflectors was optimised by the hybrid simulated-annealing genetic algorithm for achieving highest omnidirectional reflectance. The omnidirectional reflectance of the TDBR is much higher than that of a DBR and the highest omnidirectional reflectance of the TDBR is tuned to the central wavelength from which the DBR deviates
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium compounds; genetic algorithms; reflectivity; simulated annealing; AlGaN-GaN; TDBR; distributed reflectors; omnidirectional reflectance; simulated-annealing genetic algorithm; tuned distributed Bragg reflector;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20062802
  • Filename
    4015933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=835191