DocumentCode
835202
Title
The small-signal response of 1.5 μm multiple-quantum-well lasers in a two-band-model approximation
Author
Lee, Johnson ; Vassell, M.O.
Author_Institution
GTE Labs. Inc., Waltham, MA, USA
Volume
28
Issue
3
fYear
1992
fDate
3/1/1992 12:00:00 AM
Firstpage
624
Lastpage
634
Abstract
The variation of the small-signal response of 1.5 μm unstrained multiple quantum-well lasers with the number of wells (N W ) is studied theoretically in a two-band-model (TB) approximation. The quasi-Fermi energies, together with gain and spontaneous emission rate spectra, are formulated analytically assuming a finite-well model and flatband conditions, including the contributions from carriers in both the wells and the barriers. The gain spectrum shows two major peaks located at the lowest heavy-hole and light-hole transitions. Therefore, the lasers under investigation are treated as three-level systems. The optical confinement factors are evaluated numerically by the matrix transfer method. The traditional rate equations are reformulated and solved for the frequency and damping rate of the relaxation oscillations in terms of an equivalent circuit
Keywords
laser theory; laser transitions; modelling; semiconductor junction lasers; 1.5 micron; damping rate; equivalent circuit; finite-well model; flatband conditions; gain spectrum; heavy hole transitions; light-hole transitions; matrix transfer method; multiple-quantum-well lasers; optical confinement factors; quasi-Fermi energies; rate equations; relaxation oscillations; small-signal response; spontaneous emission rate spectra; three-level systems; two-band-model approximation; Carrier confinement; Damping; Equations; Frequency; Laser modes; Laser theory; Laser transitions; Quantum well devices; Quantum well lasers; Spontaneous emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.124986
Filename
124986
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