Title :
Room-temperature intersubband emission of GaN/AlN quantum wells at λ=2.3 μm
Author :
Nevou, L. ; Julien, F.H. ; Colombelli, R. ; Guillot, F. ; Monroy, E.
Author_Institution :
OptoGaN Dept., Inst. d´´Electronique Fondamentale, Orsay
Abstract :
Optically-pumped intersubband emission of GaN/AlN quantum wells at room temperature has been experimentally demonstrated for the first time. The peak emission wavelength is at lambda=2.3 mum. It is the shortest value ever reported for an intersubband device
Keywords :
III-V semiconductors; aluminium compounds; excited states; gallium compounds; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; 2.3 micron; GaN-AlN; intersubband device; intersubband emission; peak emission wavelength; quantum wells;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20062282
