Title :
Lithography with high depth of focus by an ion projection system
Author :
Buchmann, L.M. ; Schnakenberg, U. ; Torkler, M. ; Löschner, H. ; Stengl, G. ; Traher, C. ; Fallmann, W. ; Stangl, G. ; Cekan, E.
Author_Institution :
Fraunhofer-Inst. fuer Mikrostrukturtech., Berlin, Germany
fDate :
9/1/1992 12:00:00 AM
Abstract :
Ion projection lithography is developed to generate structures with minimum feature sizes in the 100-nm range with a high pixel transfer rate. The high depth of focus (DOF) resulting from the telecentric beam path concept is also noteworthy. A silicon wafer exhibiting 200-μm-deep cavities, which are fabricated by anisotropic etching, is patterned with a grating of 0.6 μm periodicity running with identical spacings from the bottom to the top. SiO2 serves as an inorganic ion sensitive resist. Exposed to 73 keV helium ions, SiO2 shows an enhanced etching rate in hydrofluoric acid, the structure developing agent. The patterning techniques considered are promising for the fabrication of two-dimensional reflecting mirrors or sensoric elements distributed on spherical surfaces
Keywords :
ion beam lithography; optical projectors; semiconductor technology; 0.6 micron; 73 keV; Si; depth of focus; grating; ion projection lithography; ion projection system; ion sensitive resist; minimum feature sizes; patterning techniques; periodicity; pixel transfer rate; sensoric elements; spherical surfaces; structure developing agent; telecentric beam path concept; two-dimensional reflecting mirrors; Anisotropic magnetoresistance; Electrons; Electrostatics; Etching; Helium; Lenses; Lithography; Optical surface waves; Silicon; Surface topography;
Journal_Title :
Microelectromechanical Systems, Journal of
