Lithography with high depth of focus by an ion projection system

Author

Buchmann, L.M. ; Schnakenberg, U. ; Torkler, M. ; Löschner, H. ; Stengl, G. ; Traher, C. ; Fallmann, W. ; Stangl, G. ; Cekan, E.

Author_Institution

Fraunhofer-Inst. fuer Mikrostrukturtech., Berlin, Germany

Volume

1

Issue

3

fYear

1992

fDate

9/1/1992 12:00:00 AM

Firstpage

116

Lastpage

120

Abstract

Ion projection lithography is developed to generate structures with minimum feature sizes in the 100-nm range with a high pixel transfer rate. The high depth of focus (DOF) resulting from the telecentric beam path concept is also noteworthy. A silicon wafer exhibiting 200-μm-deep cavities, which are fabricated by anisotropic etching, is patterned with a grating of 0.6 μm periodicity running with identical spacings from the bottom to the top. SiO₂ serves as an inorganic ion sensitive resist. Exposed to 73 keV helium ions, SiO₂ shows an enhanced etching rate in hydrofluoric acid, the structure developing agent. The patterning techniques considered are promising for the fabrication of two-dimensional reflecting mirrors or sensoric elements distributed on spherical surfaces

Keywords

ion beam lithography; optical projectors; semiconductor technology; 0.6 micron; 73 keV; Si; depth of focus; grating; ion projection lithography; ion projection system; ion sensitive resist; minimum feature sizes; patterning techniques; periodicity; pixel transfer rate; sensoric elements; spherical surfaces; structure developing agent; telecentric beam path concept; two-dimensional reflecting mirrors; Anisotropic magnetoresistance; Electrons; Electrostatics; Etching; Helium; Lenses; Lithography; Optical surface waves; Silicon; Surface topography;

fLanguage

English

Journal_Title

Microelectromechanical Systems, Journal of

Publisher

ieee

ISSN

1057-7157

Type

jour

DOI

10.1109/84.186390

Filename

186390