DocumentCode :
835437
Title :
Strain-compensated GaInNAs structures for 1.3-μm lasers
Author :
Jouhti, Tomi ; Peng, Chang Si ; Pavelescu, Emil-Mihai ; Konttinen, Janne ; Gomes, Luis Aguiar ; Okhotnikov, Oleg G. ; Pessa, Markus
Author_Institution :
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
Volume :
8
Issue :
4
fYear :
2002
Firstpage :
787
Lastpage :
794
Abstract :
GaAs-based dilute nitride lasers are potential light sources for future optical fiber communication systems at the wavelength of 1.3 μm. In this paper we discuss the results of studies of optimization of the growth conditions and active regions of the GaAs-based lasers. To this end, a series of samples were grown using the molecular beam epitaxy technique. The active regions consisted of quantum wells, strain-compensating layers, and strain-mediating layers. They were characterized by photoluminescence and double crystal X-ray diffraction methods. The optical properties were very much affected by a choice of growth conditions, details of the quantum wells, and postgrowth thermal treatment. Preliminary results on diode-pumped vertical-cavity surface emitting lasers, which launch light power of 3.5 mW coupled into a single-mode fiber, are also presented.
Keywords :
X-ray diffraction; gallium arsenide; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; optical fabrication; optical testing; optical transmitters; optimisation; photoluminescence; quantum well lasers; semiconductor device testing; 1.3 micron; 1.3-μm lasers; 3.5 mW; GaAs-based dilute nitride lasers; GaAs-based lasers; GaInNAs; active regions; diode-pumped vertical-cavity surface emitting lasers; double crystal X-ray diffraction methods; growth conditions; launch light power; light sources; molecular beam epitaxy technique; optical fiber communication systems; optical properties; optimization; photoluminescence; postgrowth thermal treatment; quantum wells; single-mode fiber; strain-compensated GaInNAs structures; strain-compensating layers; strain-mediating layers; Fiber lasers; Light sources; Molecular beam epitaxial growth; Optical fiber communication; Photoluminescence; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; X-ray diffraction; X-ray lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2002.801671
Filename :
1039470
Link To Document :
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