Title :
Growth of highly strained GaInAs-GaAs quantum wells on patterned substrate and its application for multiple-wavelength vertical-cavity surface-emitting laser array
Author :
Arai, Masakazu ; Kondo, Takashi ; Matsutani, Akihiro ; Miyamoto, Tomoyuki ; Koyama, Fumio
Author_Institution :
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We carried out the growth of highly strained GaInAs-GaAs quantum wells (QWs) on a patterned substrate for extending emission wavelength on a GaAs substrate. We examined the shift of photoluminescence wavelength of the QWs and showed a large wavelength shift due to the spatial modulation in well thickness and indium composition. We demonstrated a single-mode multiple-wavelength vertical-cavity surface-emitting laser (VCSEL) array on a patterned GaAs substrate covering a new wavelength window of 1.1-1.2 μm. By optimizing pattern shape, we achieved multiple-wavelength operation with widely and precisely controlled lasing wavelengths. The maximum lasing span is as large as 77 nm. We carried out a data transmission experiment through 5-km of single-mode fiber with a 2.5 Gb/s/channel. The total throughput reaches 10 Gb/s. The VCSEL-based wavelength-division-multiplexing (WDM) source would be a good candidate for WDM-LAN beyond 10 Gb/s.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; internal stresses; optical transmitters; photoluminescence; quantum well lasers; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; wavelength division multiplexing; 1.1 to 1.2 micron; 10 Gbit/s; 5 km; GaAs; GaAs substrate; GaInAs-GaAs; In composition; MOCVD; VCSEL array; VCSEL-based wavelength-division-multiplexing source; WDM-LAN; data transmission; emission wavelength; highly strained GaInAs-GaAs quantum wells; maximum lasing span; multiple-wavelength operation; multiple-wavelength vertical-cavity surface-emitting laser array; pattern shape optimization; patterned substrate; photoluminescence wavelength shift; precisely controlled lasing wavelengths; single-mode fiber; single-mode multiple-wavelength VCSEL array; spatial modulation; total throughput; well thickness; Data communication; Gallium arsenide; Indium; Optical arrays; Photoluminescence; Quantum well lasers; Shape control; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2002.800844
