GaAsSb: a novel material for near infrared photodetectors on GaAs substrates

Author

Sun, Xiaoguang ; Wang, Shuling ; Hsu, Jean S. ; Sidhu, Rubin ; Zheng, Xiaoguang G. ; Li, Xiaowei ; Campbell, Joe C. ; Holmes, Archie L., Jr.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

8

Issue

4

fYear

2002

Firstpage

817

Lastpage

822

Abstract

We have studied the molecular beam epitaxy (MBE) growth of GaAsSb on GaAs substrates. The optical properties and composition of GaAsSb layer strongly depend on the growth temperature, the Ga growth rate, and the As and Sb fluxes and their ratios. We also report on two GaAsSb-GaAs photodiode structures operating at 1.3 μm. The peak quantum efficiency was 54% for the GaAsSb resonant-cavity-enhanced (RCE) p-i-n photodiode and 36% for the RCE GaAsSb avalanche photodiode (APD) with separate absorption, charge, and multiplication regions (SACM). At 90% of the breakdown, the dark current of the SACM APD was 5 nA. The GaAsSb SACM APD also exhibited very low multiplication noise and k_eff was approximately 0.1, which is the lowest ever reported for APDs operating at 1.3 μm.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; gallium arsenide; gallium compounds; infrared detectors; molecular beam epitaxial growth; optical resonators; p-i-n photodiodes; photodetectors; photoluminescence; semiconductor epitaxial layers; semiconductor growth; 1.3 micron; 5 nA; As fluxes; Ga growth rate; GaAs; GaAs substrates; GaAsSb; GaAsSb near infrared photodetectors; GaAsSb resonant-cavity-enhanced p-i-n photodiode; GaAsSb-GaAs photodiode structures; MBE growth; Sb fluxes; absorption regions; breakdown; charge regions; composition; dark current; growth temperature; molecular beam epitaxy; multiplication regions; optical properties; peak quantum efficiency; resonant-cavity-enhanced GaAsSb avalanche photodiode; very low multiplication noise; Absorption; Avalanche photodiodes; Gallium arsenide; Molecular beam epitaxial growth; Optical materials; PIN photodiodes; Photodetectors; Resonance; Substrates; Temperature dependence;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2002.800848

Filename

1039474