Title :
3-D photonic circuit technology
Author :
Raburn, Maura ; Liu, Bin ; Rauscher, Katharina ; Okuno, Yae ; Dagli, Nadir ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Vertically coupled, wafer-bonded III-V semiconductor waveguide devices provide a means to obtain more powerful, compact photonic integrated circuits and allow for the combination of different materials onto a single chip. Various switching, filtering, multiplexing, and beam splitting devices in the InP-InGaAsP and GaAs-AlGaAs systems for signals in the 1550-nm range have been realized. An investigation of optimal optical add-drop multiplexer waveguide layout shapes has been performed through integration of the coupled-mode Riccati equation, providing potential sidelobe levels of less than -32 dB and filter bandwidths over 20% narrower than those of previous devices. Effects of nonideal processing conditions on filter performance are analyzed as well.
Keywords :
III-V semiconductors; Riccati equations; coupled mode analysis; integrated optics; optical beam splitters; optical directional couplers; optical switches; optical waveguide filters; wafer bonding; wavelength division multiplexing; 1550 nm; 3-D photonic circuit technology; GaAs-AlGaAs; GaAs-AlGaAs systems; InP-InGaAsP; InP-InGaAsP systems; beam splitting devices; compact photonic integrated circuits; coupled-mode Riccati equation; filter bandwidths; filter performance; filtering devices; multiplexing devices; nonideal processing conditions; optical directional couplers; optimal optical add-drop multiplexer waveguide layout shapes; potential sidelobe levels; switching devices; vertically coupled wafer-bonded III-V semiconductor waveguide devices; Coupling circuits; III-V semiconductor materials; Integrated circuit technology; Optical filters; Optical materials; Optical waveguides; Photonic integrated circuits; Power semiconductor switches; Riccati equations; Semiconductor waveguides;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2002.801743