DocumentCode
835817
Title
Deep Level Transient Spectroscopy of High-Purity Germanium Diodes/Detectors
Author
Haller, Eugene E. ; Li, Pearl P. ; Hubbard, G.Scott ; Hansen, William L.
Author_Institution
Lawrence Berkeley Laboratory, University of California Berkelay, California 94720
Volume
26
Issue
1
fYear
1979
Firstpage
265
Lastpage
270
Abstract
Deep Level Transient Spectroscopy (DLTS) has been applied for the first time to high-purity germanium p-i-n diodes. Using the correlator technique, a large number of peaks due to acceptor levels in the forbidden band have been observed. The levels due to substitutional copper, to copper-hydrogen complexes and to divacancy-hydrogen defects have been positively identified. Several unknown levels have been discovered. The results obtained with DLTS are in excellent agreement with results from Hall-effect measurements. DLTS is the perfect tool to follow the creation and annealing of radiation defects.
Keywords
Biomedical measurements; Detectors; Energy states; Germanium; Hall effect; P-i-n diodes; PIN photodiodes; Semiconductor diodes; Shape; Spectroscopy;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1979.4329643
Filename
4329643
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