DocumentCode :
835837
Title :
Correlation between Surface Properties and Detection Characteristics of Cadmium Telluride Detectors
Author :
Hage-Ali, M. ; Stuck, R. ; Scharager, C. ; Siffert, P.
Author_Institution :
Centre de Recherches Nucléaires Groupe de Physique et Applications des Semiconducteurs 67037 Strasbourg-Cedex (France)
Volume :
26
Issue :
1
fYear :
1979
Firstpage :
281
Lastpage :
291
Abstract :
Up to now, only very little attention has been given to the surface properties of cadmium telluride detectors, the best reported results being given When lapped surfaces, a result which is rather strange, when compared to the general behaviour of semiconductors. In order to better understand the mechanism involved at a metal-cadmium telluride contact, the properties of mechanically polished, chemically etched and also oxidized surfaces of cadmium telluride crystals have been investigated using various methods including ellipsometry, Rutherford backscattering in channelling conditions and secondary ion mass spectroscopy. Most important contaminants have been identified for each kind of preparation. Furthermore, it could be shown that if polished and certain oxidized surfaces are quite stable in air, etched surface become covered by a tellurium oxide layer, whose thickness increases even after very long periods of time. Detectors have been prepared afterwards on identical samples having received the various surface treatments and the main detectors properties investigated, especially noise, resolution, efficiency and polarization.
Keywords :
Backscatter; Cadmium compounds; Chemicals; Crystals; Detectors; Ellipsometry; Etching; Mechanical factors; Surface contamination; Surface treatment;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1979.4329646
Filename :
4329646
Link To Document :
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