• DocumentCode
    835910
  • Title

    Surface processing with partially ionized plasmas

  • Author

    Coburn, J.W.

  • Author_Institution
    IBM Almaden Res. Center, San Jose, CA, USA
  • Volume
    19
  • Issue
    6
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    1048
  • Lastpage
    1062
  • Abstract
    Partially ionized plasmas are used extensively to process surfaces in many areas of technology. Surface processing in this discussion includes deposition of thin films, etching of the surface itself, and modification of the existing surface by oxidation, nitriding, or texturing. Unique materials can be synthesized in reactive gas glow discharges. The development and optimization of plasma processes is impeded by both a lack of understanding of the mechanistic details and by the formidable parameter space associated with plasma equipment. The complexity of the reactive gas plasma environment coupled with the large parameter space causes difficulty in process development and optimization, but offers opportunities for discovery and invention. The ability of partially ionized plasmas to generate uniform fluxes over wide areas of energetic ions and/or reactive neutral atoms or radicals can be expected to ensure continued widespread applications for the plasma processing of surfaces
  • Keywords
    plasma deposition; reviews; sputter etching; energetic ions; etching; large parameter space; mechanistic details; nitriding; optimization; oxidation; partially ionized plasmas; process development; radicals; reactive gas glow discharges; reactive gas plasma environment; reactive neutral atoms; surface processing; texturing; thin film deposition; uniform fluxes; Atomic measurements; Etching; Glow discharges; Oxidation; Plasma applications; Plasma materials processing; Sputtering; Surface discharges; Surface impedance; Surface texture;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.125030
  • Filename
    125030