DocumentCode
835910
Title
Surface processing with partially ionized plasmas
Author
Coburn, J.W.
Author_Institution
IBM Almaden Res. Center, San Jose, CA, USA
Volume
19
Issue
6
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
1048
Lastpage
1062
Abstract
Partially ionized plasmas are used extensively to process surfaces in many areas of technology. Surface processing in this discussion includes deposition of thin films, etching of the surface itself, and modification of the existing surface by oxidation, nitriding, or texturing. Unique materials can be synthesized in reactive gas glow discharges. The development and optimization of plasma processes is impeded by both a lack of understanding of the mechanistic details and by the formidable parameter space associated with plasma equipment. The complexity of the reactive gas plasma environment coupled with the large parameter space causes difficulty in process development and optimization, but offers opportunities for discovery and invention. The ability of partially ionized plasmas to generate uniform fluxes over wide areas of energetic ions and/or reactive neutral atoms or radicals can be expected to ensure continued widespread applications for the plasma processing of surfaces
Keywords
plasma deposition; reviews; sputter etching; energetic ions; etching; large parameter space; mechanistic details; nitriding; optimization; oxidation; partially ionized plasmas; process development; radicals; reactive gas glow discharges; reactive gas plasma environment; reactive neutral atoms; surface processing; texturing; thin film deposition; uniform fluxes; Atomic measurements; Etching; Glow discharges; Oxidation; Plasma applications; Plasma materials processing; Sputtering; Surface discharges; Surface impedance; Surface texture;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/27.125030
Filename
125030
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