Title :
A New Gate Induced Barrier Thin-Film Transistor (GIB-TFT) for Active Matrix Liquid Crystal Displays: Design and Performance Considerations
Author :
Kumar, M. Jagadesh ; Orouji, Ali A.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi
Abstract :
Reducing the OFF-state leakage current, and eliminating the pseudo-subthreshold conduction in polysilicon thin-film transistors (TFTs), is a major problem since the channel current is controlled by the potential barrier associated with the grain boundaries in the undoped channel. In this paper, we present for the time, a new gate-induced barrier TFT (GIB-TFT) in which the undoped channel has no grain boundaries, while the channel current is controlled by inducing large potential barriers in the channel. We demonstrate that the proposed GIB-TFT exhibits a steep subthreshold slope and at least three orders of magnitude less OFF-state leakage current when compared to the conventional polysilicon TFTs. Using two-dimensional and two-carrier device simulation, we have analyzed the various performance and design considerations of the GIB-TFT and explained the reasons for its improved performance
Keywords :
leakage currents; liquid crystal displays; thin film transistors; 2D simulation; active matrix liquid crystal displays; channel current; gate induced barrier thin-film transistor; grain boundary; leakage current; potential barrier; thin-film transistors; two-carrier device simulation; Active matrix liquid crystal displays; Analytical models; Annealing; Grain boundaries; Leakage current; Liquid crystal displays; Medical simulation; Performance analysis; Silicon; Thin film transistors; Grain boundary; leakage current; polysilicon; potential barrier; subthreshold; thin-film transistor (TFT); traps; two-dimensional (2-D) simulation;
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2006.884692
