GaN-Based LEDs With Rough Surface and Selective KOH Etching

Author

Shoou-Jinn Chang ; Chang, L.M. ; Kuo, D.S. ; Ko, Tae Kuk ; Hon, S.J. ; Shuguang Li

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

10

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

27

Lastpage

32

Abstract

The authors propose a simple method to enhance the performances of GaN-based light-emitting diodes (LEDs) with rough surface. By using KOH to selectively smooth the area beneath the p-contact pad, it was found that we could reduce the forward voltage and enhance output power of the GaN-based LEDs. It was also found that wall-plug efficiency (WPE) of the proposed LEDs was 10.3% larger than that of the conventional LEDs with rough surface and 33.9% larger than that of the conventional LEDs with flat surface. Furthermore, it was found that the use of selective KOH etching will not degrade drooping effect of the LEDs.

Keywords

III-V semiconductors; LED displays; etching; rough surfaces; wide band gap semiconductors; GaN; LED; WPE; drooping effect; forward voltage reduction; light-emitting diode; p-contact pad; rough surface; selective KOH etching; wall-plug efficiency; Educational institutions; Etching; Light emitting diodes; Power generation; Rough surfaces; Surface roughness; GaN; LEDs; WPE; select KOH etching;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2013.2278621

Filename

6579669