InGaZnO metal-base transistor with high current gain

Author

Huang, H.Y. ; Wang, S.J. ; Hung, C.H. ; Wu, Cathy H. ; Lin, W.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

50

Issue

20

fYear

2014

fDate

September 25 2014

Firstpage

1465

Lastpage

1467

Abstract

The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at V_CE = 2 V and I_B ranging from 1 to 10 nA.

Keywords

Schottky barriers; gallium compounds; gold; hafnium compounds; indium compounds; semiconductor diodes; semiconductor doping; semiconductor materials; sputtered coatings; thin film transistors; titanium; zinc compounds; Au-HfSiO-InGaZnO; Schottky barrier heights; Ti-Au-HfSiO; Ti-InGaZnO; base/collector junctions; base/emitter junctions; current 1 nA to 10 nA; diode performances; high common-emitter current gain; interlayer; metal-base transistor; oxygen doping; size 5 nm to 10 nm; sputtering-deposited film; temperature 293 K to 298 K; voltage 2 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.2201

Filename

6908651