Title :
InGaZnO metal-base transistor with high current gain
Author :
Huang, H.Y. ; Wang, S.J. ; Hung, C.H. ; Wu, Cathy H. ; Lin, W.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
September 25 2014
Abstract :
The fabrication of metal-base transistors (MBTs) based on InGaZnO at room temperature is reported for the first time. With a suitable oxygen doping to the sputtering-deposited InGaZnO film and an HfSiO interlayer, improved diode performances with enhanced Schottky barrier heights of 0.70 and 0.66 eV are obtained for the base/collector (Ti/InGaZnO) and base/emitter (Au/HfSiO/InGaZnO) junctions, respectively. InGaZnO MBT using a Ti(10 nm)/Au(10 m)/HfSiO(5 nm) dual metal base shows a high common-emitter current gain (β) 840-310 at VCE = 2 V and IB ranging from 1 to 10 nA.
Keywords :
Schottky barriers; gallium compounds; gold; hafnium compounds; indium compounds; semiconductor diodes; semiconductor doping; semiconductor materials; sputtered coatings; thin film transistors; titanium; zinc compounds; Au-HfSiO-InGaZnO; Schottky barrier heights; Ti-Au-HfSiO; Ti-InGaZnO; base/collector junctions; base/emitter junctions; current 1 nA to 10 nA; diode performances; high common-emitter current gain; interlayer; metal-base transistor; oxygen doping; size 5 nm to 10 nm; sputtering-deposited film; temperature 293 K to 298 K; voltage 2 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.2201
