Characterizations and Analyses of Large-Area a-Si:H/μc-Si:H Thin-Film Solar Modules for Efficiency Optimization

Author

Gau, S.C.

Author_Institution

Best Solar Hi-Tech Co., Ltd., Nanchang, China

Volume

3

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

72

Lastpage

76

Abstract

Light-induced degradation, quantum efficiencies, thickness uniformity, Raman spectra, and secondary ion microspectroscopy for a-Si:H/μc-Si:H films are analyzed for 2.2 m × 2.6 m thin-film solar modules that are produced in the manufacturing line. The results of the characterization and analyses are used to optimize parameters of the process and improve efficiencies of the devices. The average of the measured total area stabilized efficiencies for 779 modules with an area of 5.7 m² is higher than 9.2%. The I-V curve of a 5.7 m² module shows a stabilized conversion efficiency higher than 9.7%.

Keywords

Raman spectra; amorphous semiconductors; elemental semiconductors; hydrogen; optimisation; semiconductor thin films; silicon; solar cells; I-V curve; Raman spectra; Si:H; device efficiencies; efficiency optimization; large-area a-Si:H/μc-Si:H thin-film solar module analyses; large-area a-Si:H/μc-Si:H thin-film solar module characterizations; light-induced degradation; manufacturing line; process parameters; quantum efficiencies; secondary ion microspectroscopy; stabilized conversion efficiency; thickness uniformity; total area stabilized efficiencies; Glass; Impurities; Photovoltaic cells; Photovoltaic systems; Production; Silicon; Crystallinity; Raman spectrum; light-induced degradation (LID); plasma-enhanced chemical vapor deposition (PECVD);

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2012.2227462

Filename

6374198