DocumentCode
836138
Title
14xx-nm High Brightness Tapered Diode Lasers Grown by Solid-Source MBE
Author
Kallenbach, S. ; Aidam, R. ; Losch, R. ; Kaufel, G. ; Kelemen, M.T. ; Mikulla, Michael ; Weimann, G.
Volume
18
Issue
5
fYear
2006
fDate
3/1/2006 12:00:00 AM
Firstpage
655
Lastpage
657
Abstract
We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal–organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h.
Keywords
14xx; InGaAsP; high brightness; semiconductor lasers; solid-source molecular beam epitaxy (SSMBE); Brightness; Diode lasers; Epitaxial growth; Molecular beam epitaxial growth; Optical resonators; Optical waveguides; Power generation; Power lasers; Pump lasers; Semiconductor lasers; 14xx; InGaAsP; high brightness; semiconductor lasers; solid-source molecular beam epitaxy (SSMBE);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2006.870124
Filename
1597286
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