Title :
14xx-nm High Brightness Tapered Diode Lasers Grown by Solid-Source MBE
Author :
Kallenbach, S. ; Aidam, R. ; Losch, R. ; Kaufel, G. ; Kelemen, M.T. ; Mikulla, Michael ; Weimann, G.
fDate :
3/1/2006 12:00:00 AM
Abstract :
We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal–organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h.
Keywords :
14xx; InGaAsP; high brightness; semiconductor lasers; solid-source molecular beam epitaxy (SSMBE); Brightness; Diode lasers; Epitaxial growth; Molecular beam epitaxial growth; Optical resonators; Optical waveguides; Power generation; Power lasers; Pump lasers; Semiconductor lasers; 14xx; InGaAsP; high brightness; semiconductor lasers; solid-source molecular beam epitaxy (SSMBE);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.870124
