• DocumentCode
    83623
  • Title

    1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°

  • Author

    Chen, S.M. ; Tang, M.C. ; Wu, Junyong ; Jiang, Qimeng ; Dorogan, V.G. ; Benamara, M. ; Mazur, Y.I. ; Salamo, G.J. ; Seeds, Alwyn J. ; Liu, Hongying

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
  • Volume
    50
  • Issue
    20
  • fYear
    2014
  • fDate
    September 25 2014
  • Firstpage
    1467
  • Lastpage
    1468
  • Abstract
    A high-performance 1.3 μm InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained-layer superlattice serving as dislocation filter layers (DFLs). The Si-based laser achieves lasing operation up to 111°C with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser transitions; quantum dot lasers; semiconductor superlattices; DFL; InAs-GaAs; SLS; dislocation filter layers; quantum dot laser; strained-layer superlattice; temperature 293 K to 298 K; threshold current density; wavelength 1.3 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.2414
  • Filename
    6908652
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=83623