Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

Author

Jeonghwan Song ; Daeseok Lee ; Jiyong Woo ; Yunmo Koo ; Euijun Cha ; Sangheon Lee ; Jaesung Park ; Kibong Moon ; Misha, Saiful Haque ; Prakash, Aravind ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

35

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

636

Lastpage

638

Abstract

Current overshoot has severe effects on the reliability of resistive random access memory (RRAM). It is well known that the current overshoot during the SET process is caused by parasitic capacitance. In this letter, we observed a different type of current overshoot during the RESET process. The RESET current overshoot was confirmed to have severe effects on the endurance of RRAM. We also demonstrated the relation between the current overshoot and the intrinsic capacitive elements of each state of RRAM. Finally, an optimized pulse shape was proposed to minimize the current overshoot and was experimentally verified to significantly improve the variability and endurance in a typical RRAM device with a W/Zr/HfO₂/TiN structure.

Keywords

hafnium compounds; integrated circuit reliability; random-access storage; titanium compounds; tungsten; zirconium; RESET current overshoot; RRAM reliability; W-Zr-HfO₂-TiN; endurance improvement; intrinsic capacitive elements; optimized pulse shape; parasitic capacitance; resistance state; resistive random access memory; variability improvement; Capacitance; Hafnium compounds; Reliability; Resistance; Shape; Switches; Transient response; RRAM; current overshoot; endurance; endurance.; optimized pulse shape; variability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2316544

Filename

6800048