Title :
GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror
Author :
Lee, Y.J. ; Hwang, J.M. ; Hsu, T.C. ; Hsieh, M.H. ; Jou, M.J. ; Lee, B.J. ; Lu, T.C. ; Kuo, H.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonic, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
3/1/2006 12:00:00 AM
Abstract :
A GaN-based light-emitting diodes (LEDs) with V-shaped sapphire facet reflector was fabricated using the double transferred scheme and sapphire chemical wet etching. The {1-102} R-plane V-shaped facet reflector with a 57° against {0001} C-axis has the superior capability for enhancing the light extraction efficiency. The light output power of the V-shaped sapphire facet reflector LED was 1.4 times higher than that of a flat reflector LED at an injection current of 20 mA. The significant improvement is attributable to the geometrical shape of sapphire facet reflector that efficiently redirects the guided light inside the chip toward to the top escape-cone of the LED surface.
Keywords :
III-V semiconductors; aluminium; etching; gallium compounds; light emitting diodes; mirrors; optical fabrication; sapphire; wide band gap semiconductors; 20 mA; Al2O3; GaN; GaN-based LED; chemical wet etching; injection current; light extraction efficiency; sapphire facet mirror; Chemicals; Fabrication; Gallium nitride; LED lamps; Light emitting diodes; Mirrors; Refractive index; Substrates; Surface emitting lasers; Wet etching; GaN; light-emitting diode (LED); sapphire chemical wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.871136
