Title :
Microscopic modeling of gain and luminescence in semiconductors
Author :
Hader, Jörg ; Moloney, Jerome V. ; Koch, Stephan W. ; Chow, Weng W.
Author_Institution :
Arizona Center for Math. Sci., Univ. of Arizona, Tucson, AZ, USA
Abstract :
The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.
Keywords :
III-V semiconductors; electroabsorption; excitons; photoluminescence; quantum dot lasers; quantum well lasers; refractive index; semiconductor device models; semiconductor quantum dots; semiconductor quantum wells; semiconductor superlattices; spectral line shift; spontaneous emission; wave functions; wide band gap semiconductors; Bloch equations; GRINSCH structure; Type II quantum wells; VCSEL; Wannier-Stark transitions; electroabsorption; excitonic absorption; fully microscopic approach; gain modeling; high-power operating conditions; ideal semiconductor heterostructures; linewidth enhancement factor-spectra; low-intensity photoluminescence spectra; microscopic many body theory; multiple quantum-well structures; optical material properties; quantum dots; refractive index; semiconductor lasers; semiconductor superlattices; single quantum-well structures; wave functions; wide-bandgap nitride systems; Luminescence; Optical devices; Optical materials; Optical microscopy; Optical refraction; Optical scattering; Optical superlattices; Optical variables control; Quantum well lasers; Semiconductor materials;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2003.818342
