DocumentCode :
836462
Title :
Robust Absorption in a Four-Layer Dielectric-Metal Structure
Author :
Dong, J.W. ; Wu, K.S. ; Jiang, S.J. ; Wang, H.Z.
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Zhongshan Univ., Guangzhou
Volume :
20
Issue :
18
fYear :
2008
Firstpage :
1524
Lastpage :
1526
Abstract :
This letter predicts that robust absorption will appear in a four-layer dielectric-metal structure, and our experimental results verify this prediction well. The mechanisms are as follows: 1) The four layers form a cavity, and zero phase shift at the interface between the first metallic layer and the second dielectric layer is designed to make the backward light form a destructive interference and minimize the reflection. 2) The slow-light effect near the cutoff frequency in this structure increases the absorptive length many times. 3) It also can be explained as an asymmetric resonator, which satisfies the critical coupling condition. Many applications can be developed from this work, such as ensuring laser welding high quality for infrared transparent optoelectronic components.
Keywords :
dielectric materials; laser beam effects; laser beam welding; light absorption; optoelectronic devices; asymmetric resonator; backward light; critical coupling condition; destructive interference; dielectric layer; four-layer dielectric-metal structure; infrared transparent optoelectronic components; laser welding; robust absorption; slow-light effect near; zero phase shift; Dielectrics; Electromagnetic wave absorption; Laser theory; Optical films; Optical reflection; Optical resonators; Photonic band gap; Robustness; Stimulated emission; Welding; Absorption; dielectric-metal structure; laser welding; multilayer; optoelectronic components;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.928831
Filename :
4600157
Link To Document :
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