• DocumentCode
    83664
  • Title

    Midwave infrared inSb nBn photodetector

  • Author

    Evirgen, A. ; Abautret, J. ; Perez, J.P. ; Cordat, A. ; Nedelcu, A. ; Christol, P.

  • Author_Institution
    IES, Univ. Montpellier, Montpellier, France
  • Volume
    50
  • Issue
    20
  • fYear
    2014
  • fDate
    September 25 2014
  • Firstpage
    1472
  • Lastpage
    1473
  • Abstract
    The first demonstration of InSb photodetector with nBn design is reported. The nBn structure, grown by molecular beam epitaxy (MBE) on InSb substrate, is built by using n-type InSb as absorber layer and InAlSb alloy as barrier layer. The nBn detector, showing cut-off wavelength of 5.4 μm at 77 K in photovoltaic mode, exhibits dark current density as low as 10-9A/cm2 at -50 mV reverse bias, at least two decades lower than usual InSb photodiode.
  • Keywords
    antimony alloys; current density; indium alloys; infrared detectors; molecular beam epitaxial growth; photodetectors; photovoltaic effects; InSb; MBE; absorber layer; dark current density; midwave infrared nBn photodetector; molecular beam epitaxial growth; photodiode; photovoltaic mode; temperature 77 K; voltage -50 mV; wavelength 5.4 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.2799
  • Filename
    6908655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=83664