Title :
Midwave infrared inSb nBn photodetector
Author :
Evirgen, A. ; Abautret, J. ; Perez, J.P. ; Cordat, A. ; Nedelcu, A. ; Christol, P.
Author_Institution :
IES, Univ. Montpellier, Montpellier, France
fDate :
September 25 2014
Abstract :
The first demonstration of InSb photodetector with nBn design is reported. The nBn structure, grown by molecular beam epitaxy (MBE) on InSb substrate, is built by using n-type InSb as absorber layer and InAlSb alloy as barrier layer. The nBn detector, showing cut-off wavelength of 5.4 μm at 77 K in photovoltaic mode, exhibits dark current density as low as 10-9A/cm2 at -50 mV reverse bias, at least two decades lower than usual InSb photodiode.
Keywords :
antimony alloys; current density; indium alloys; infrared detectors; molecular beam epitaxial growth; photodetectors; photovoltaic effects; InSb; MBE; absorber layer; dark current density; midwave infrared nBn photodetector; molecular beam epitaxial growth; photodiode; photovoltaic mode; temperature 77 K; voltage -50 mV; wavelength 5.4 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.2799
