• DocumentCode
    836707
  • Title

    Ultrafast simulations of multimode VCSEL using optimized waist paraxial eigenmodes

  • Author

    Riyopoulos, S. ; Dialetis, D.

  • Author_Institution
    Sci. Applic. Int. Corp., McLean, VA, USA
  • Volume
    9
  • Issue
    3
  • fYear
    2003
  • Firstpage
    892
  • Lastpage
    904
  • Abstract
    An ultrafast two-dimensional (2-D) multimode vertical-cavity surface-emitting laser (VCSEL) simulation tool suite is introduced using eigenmode expansion of the rate equations, utilizing a novel generic representation for laterally open VCSEL cavity eigenmodes by optimized-waist paraxial modes. By avoiding the need to resolve short spatial and fast temporal scales, the code runs much faster than finite difference time domain and beam propogation method codes, retaining the 2-D description for the nonuniform carrier density and intensity profiles, multimode excitation, and axial carrier density depletion ("hole burning"). Code validation results against experimental measurements, such as steady-state NF mode structure, threshold gain versus aperture diameter, and dynamic mode switching, are presented. The code yields the correct behavior regarding aperture placement, with lower thresholds for aperture at node. Fast (<1 b/s) execution time allows detailed dynamic simulation of driven response over long input streams for the statistical extraction of bit-error rate and relative intensity noise figures of merit.
  • Keywords
    carrier density; distributed Bragg reflector lasers; dynamic response; eigenvalues and eigenfunctions; laser cavity resonators; laser noise; optical hole burning; quantum well lasers; semiconductor device models; spontaneous emission; surface emitting lasers; FLASH-V tool; aperture diameter; axial carrier density depletion; axisymmetric situations; dynamic mode switching; dynamic response program; dynamic simulation; effective energy confinement length; figures of merit; hole burning; laterally open cavity eigenmodes; multimode excitation; nonuniform carrier density profiles; nonuniform intensity profiles; optimized waist paraxial eigenmodes; quantum wells; relative intensity noise; spontaneous emission contribution; threshold gain; two-dimensional multimode VCSEL; ultrafast simulation; Apertures; Charge carrier density; Equations; Finite difference methods; Gain measurement; Laser modes; Spatial resolution; Surface emitting lasers; Two dimensional displays; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2003.818853
  • Filename
    1250492