A monolithic array of silicon, drift detectors for high-resolution gamma-ray imaging

Author

Fiorini, C. ; Longoni, A. ; Perotti, F. ; Labanti, C. ; Rossi, E. ; Lechner, P. ; Soltau, H. ; Strüder, Lothar

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

995

Lastpage

1000

Abstract

In this work, the preliminary results obtained with a high position resolution gamma-ray imaging detector are presented. The detector consists of a single CsI(Tl) scintillator crystal optically coupled to a monolithic array of 19 silicon drift detectors (SDDs) used as photodetectors. In this array, having a total sensitive area of about 1 cm², each SDD has a front-end JFET directly integrated on the detector chip, close to the collecting anode. This architecture reduces the electronic noise of each single photodetector to a value small enough to obtain a submillimeter position resolution at 122 keV gamma-ray energy. The present detector module represents the development of a previous prototype based on a very limited numbers of SDDs.

Keywords

biomedical electronics; diagnostic radiography; gamma-ray detection; junction gate field effect transistors; photodetectors; position sensitive particle detectors; silicon radiation detectors; 122 keV; CsI:Tl; Si; collecting anode; detector chip; electronic noise; front-end JFET; high-resolution gamma-ray imaging; monolithic array; photodetectors; position resolution; silicon drift detectors; single scintillator crystal; total sensitive area; Gamma ray detection; Gamma ray detectors; Image resolution; Nuclear imaging; Optical arrays; Optical coupling; Optical sensors; Photodetectors; Sensor arrays; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039603

Filename

1039603