Title :
Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light
Author :
Shi, J.-W. ; Huang, H.-Y. ; Wang, C.-K. ; Sheu, J.-K. ; Lai, W.-C. ; Wu, Y.-S. ; Chen, C.-H. ; Chu, J.-T. ; Kuo, H.-C. ; Lin, Wei-Ping ; Yang, Tsung-Hsun ; Chyi, J. -I
Author_Institution :
Inst. of Electro-Opt. Sci. & Eng., Nat. Cheng-Kung Univ., Tainan
Abstract :
We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; integrated optoelectronics; light emitting diodes; p-n junctions; quantum well devices; visible spectra; 440 to 560 nm; GaN; GaN-based LED; electroluminescence spectra; light emitting diodes; multiple-quantum-wells; near visible emission; nonuniform carrier distribution; optical bandwidth broadening; optical bandwidth flattening; optical spectra; phosphor-free LED; stable white-light emission; transverse junction LED; transverse p-n junction; visible wavelength; white light generation; Electroluminescence; Gallium nitride; Light emitting diodes; Optical pumping; Optical saturation; P-n junctions; Phosphors; Quantum well devices; Stimulated emission; Zinc; GaN light-emitting-diode (LED); white-light generation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.887362
