• DocumentCode
    837146
  • Title

    Phase and amplitude characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches

  • Author

    Andersson, Ingmar L. ; Eng, Sverre T.

  • Author_Institution
    Dept. of Optoelectron. & Electr. Meas., Chalmers Inst. of Technol., Gothenburg, Sweden
  • Volume
    37
  • Issue
    4
  • fYear
    1989
  • fDate
    4/1/1989 12:00:00 AM
  • Firstpage
    729
  • Lastpage
    733
  • Abstract
    The transmission amplitude and phase characteristics of InP:Fe modified interdigitated gap photoconductive microwave switches are reported. Measurements in the 0.1-1 GHz frequency range show that the phase is shifted approximately 90 degrees and that the corresponding change in amplitude ranges from 43 dB at 0.1 GHz to 23 dB at 1 GHz when the illumination-induced conductance is switched from a low OFF-state value ( approximately 4*10/sup -8/ S) to a high ON-state value (5 mS). The observed characteristics can be described by a phase-shifting region and an amplitude modulation region. In the phase-shifting region the phase strongly depends on the conductance, and the amplitude is almost constant. In the amplitude modulation region both the amplitude and the phase depend on the conductance but the effect on the amplitude is much more pronounced. A lumped-element model describing the device performance is presented. It is concluded that these optoelectronic microwave switching devices are suitable for high-speed amplitude modulation but are not promising as high-speed phase shifter.<>
  • Keywords
    III-V semiconductors; amplitude modulation; equivalent circuits; indium compounds; iron; photoconducting devices; semiconductor device models; semiconductor switches; solid-state microwave devices; 0.1 to 1 GHz; 4*10/sup -5/ mS; 5 mS; GHz frequency range; III-V semiconductors; InP:Fe; UHF; amplitude characteristics; amplitude modulation region; high-speed amplitude modulation; illumination-induced conductance; lumped-element model; modified interdigitated gap; optoelectronic devices; phase characteristics; phase-shifting region; photoconductive microwave switches; Amplitude modulation; Frequency; Indium phosphide; Iron; Lighting; Masers; Microwave devices; Phase measurement; Photoconductivity; Switches;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.18846
  • Filename
    18846