Title :
The frequency-dependent impedance of p-i-n diodes
Author :
Caverly, Robert H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Southeastern Massachusetts Univ., North Dartmouth, MA
fDate :
4/1/1989 12:00:00 AM
Abstract :
It is demonstrated that the impedance of a forward-biased p-i-n diode is definable as a function of frequency and depends on the diode´s geometry and electronic properties. A procedure for calculating the equivalent series p-i-n diode impedance is presented and compared with experimental resistance versus frequency data for silicon p-i-n diodes. A procedure is also outlined for determining diode parameters for a desired resistance-frequency response
Keywords :
electric impedance; frequency response; p-i-n diodes; Si; diode geometry; diode parameters; electronic properties; equivalent series diode impedance; forward-biased PIN diode; frequency-dependent impedance; p-i-n diodes; resistance-frequency response; Electric resistance; Geometry; Impedance; Microwave frequencies; P-i-n diodes; PIN photodiodes; Packaging; Semiconductor diodes; Silicon; VHF circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
