Scaling of Bulk pMOSFETs: (110) Surface Orientation Versus Uniaxial Compressive Stress

Author

Bufler, F.M. ; Tsibizov, A. ; Erlebach, A.

Author_Institution

Inst. fur Integrierte Syst., ETH Zurich

Volume

27

Issue

12

fYear

2006

Firstpage

992

Lastpage

994

Abstract

Six-band kmiddotp Monte Carlo device simulation is used to estimate the drain current enhancements in (110) surface and in uniaxially compressively stressed bulk pMOSFETs for gate lengths down to 30 nm. Satisfactory agreement is found with measured long-channel mobility enhancements as a function of the channel direction for (110) surface orientation or as a function of stress. It turns out that the stress-induced current improvement becomes larger than for the unstrained-Si (110) surface orientation at stress levels above 1 GPa. Specifically, for a gate length of 45 nm, the on-current enhancement is 50% for 1.5 GPa compared to 35% for the favorable lang-110rang channel direction in a (110) pMOSFET

Keywords

MOSFET; Monte Carlo methods; semiconductor device models; Monte Carlo device simulation; bulk pMOSFET; channel direction; drain current enhancements; long-channel mobility enhancements; stress-induced current improvement; surface orientation; uniaxial compressive stress; CMOS technology; Compressive stress; MOSFETs; Monte Carlo methods; Rough surfaces; Scattering; Silicon; Stress measurement; Surface roughness; Surface waves; (110) surface; Enhanced mobility; Monte Carlo device simulation; PMOS; strained silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.886706

Filename

4016179