Title :
InGaP/InGaAs Pseudomorphic Heterodoped-Channel FETs With a Field Plate and a Reduced Gate Length by Splitting Gate Metal
Author :
Chen, H.R. ; Hsu, M.K. ; Chiu, S.Y. ; Chen, W.T. ; Chen, G.H. ; Chang, Y.C. ; Lour, W.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Kaohsiung
Abstract :
Depositing gate metal across a step undercut between the Schottky barrier layer and the insulator-like layer is employed to obtain a reduced gate length of 0.4 mum with an additional 0.6-mum field plate from a 1-mum gate window. Most dc and ac characteristics including current density (IDSS=451mA/mm), transconductance (gm,max=225mS/mm), breakdown voltages (VBD(DS)/V BD(GD)=22/-25.5V), gate-voltage swing (GVS=2.24V), cutoff, and maximum oscillation frequencies (ft/fmax=17.2/32GHz) are improved as compared to those of a 1-mum gate device without field plate. At a VDS of 4.0 V, a maximum power added efficiency of 36% with an output power of 13.9 dBm and a power gain of 8.7 dB are obtained at a frequency of 1.8 GHz. The saturated output power and the linear power gain are 316 mW/mm and 13 dB, respectively
Keywords :
Schottky barriers; current density; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; semiconductor device breakdown; 0.4 micron; 0.6 micron; 1 micron; 1.8 GHz; 13 dB; 17.2 GHz; 32 GHz; 4 V; 8.7 dB; InGaP-InGaAs; Schottky barrier layer; current density; device linearity; field plate; gate metal; insulator-like layer; pseudomorphic heterodoped-channel FET; Current density; Decision support systems; FETs; Gain; Indium gallium arsenide; Insulation; Metal-insulator structures; Power generation; Schottky barriers; Transconductance; Device linearity; InGaP/InGaAs; field plate; high breakdown; pseudomorphic;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.886717
