• DocumentCode
    837597
  • Title

    Lateral optical confinement of channeled-substrate-planar lasers with GaAs/AlGaAs substrates

  • Author

    Evans, Gary A. ; Butler, Jerome K. ; Masin, Valerie J.

  • Author_Institution
    David Sarnoff Res. Center, Princeton, NJ, USA
  • Volume
    24
  • Issue
    5
  • fYear
    1988
  • fDate
    5/1/1988 12:00:00 AM
  • Firstpage
    737
  • Lastpage
    749
  • Abstract
    A physical explanation of the lateral guiding mechanism in channeled-substrate-planar (CSP) lasers based on the amount of wavefront tilt of the transverse field outside the channel region is presented. Because of this inherent wavefront tilt, all CSP lasers will have a very slight asymmetry in their transverse far-field pattern. The nature of the guiding mechanism does not require light absorption by the substrate. Design curves showing the complex lateral effective index step as a function of n-clad thickness with the active layer as a parameter are also presented. Depending on the specific layer compositions and thicknesses, the CSP guiding mechanism can provide a positive lateral index step for substrates with mole fractions of AlAs ranging from 0 to higher than 0.2
  • Keywords
    III-V semiconductors; aluminium; gallium arsenide; semiconductor junction lasers; CSP; GaAs-AlGaAs; channeled-substrate-planar lasers; effective index step; far-field pattern; guiding mechanism; light absorption; mole fractions; optical confinement; wavefront tilt; Buffer layers; Distributed feedback devices; Epitaxial growth; Gallium arsenide; Laser modes; Laser theory; Power lasers; Semiconductor lasers; Substrates; Surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.189
  • Filename
    189