DocumentCode
837597
Title
Lateral optical confinement of channeled-substrate-planar lasers with GaAs/AlGaAs substrates
Author
Evans, Gary A. ; Butler, Jerome K. ; Masin, Valerie J.
Author_Institution
David Sarnoff Res. Center, Princeton, NJ, USA
Volume
24
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
737
Lastpage
749
Abstract
A physical explanation of the lateral guiding mechanism in channeled-substrate-planar (CSP) lasers based on the amount of wavefront tilt of the transverse field outside the channel region is presented. Because of this inherent wavefront tilt, all CSP lasers will have a very slight asymmetry in their transverse far-field pattern. The nature of the guiding mechanism does not require light absorption by the substrate. Design curves showing the complex lateral effective index step as a function of n -clad thickness with the active layer as a parameter are also presented. Depending on the specific layer compositions and thicknesses, the CSP guiding mechanism can provide a positive lateral index step for substrates with mole fractions of AlAs ranging from 0 to higher than 0.2
Keywords
III-V semiconductors; aluminium; gallium arsenide; semiconductor junction lasers; CSP; GaAs-AlGaAs; channeled-substrate-planar lasers; effective index step; far-field pattern; guiding mechanism; light absorption; mole fractions; optical confinement; wavefront tilt; Buffer layers; Distributed feedback devices; Epitaxial growth; Gallium arsenide; Laser modes; Laser theory; Power lasers; Semiconductor lasers; Substrates; Surface emitting lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.189
Filename
189
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