Performance Gain Through Dynamic Control of Device Geometry: Nanoelectromechanical Carbon Nanotube-Based Switch

Author

Engström, K.E. ; Kinaret, J.M.

Author_Institution

Dept. of Appl. Phys., Chalmers Univ. of Technol., Goteborg

Volume

27

Issue

12

fYear

2006

Firstpage

988

Lastpage

991

Abstract

Performance advantages resulting from a dynamic control of device geometry in a nanoscale nanoelectromechanical systems device are discussed. Specifically, a nanoscale three-terminal carbon nanotube-based relay in a semiclassical analysis is investigated. As an illustration, the authors estimate the optimal subthreshold swing S of the system and find that it can be made superior to that of the ideal MOSFET; values in the range S=20-60mV/dec can be obtained with typical parameter values

Keywords

carbon nanotubes; nanoelectronics; relays; CMOS devices; carbon nanotubes; device geometry; dynamic control; field-effect transistors; ideal MOSFET; nanoelectromechanical carbon nanotube-based switch; nanorelay; nanoscale nanoelectromechanical systems device; nanoscale three-terminal carbon nanotube-based relay; nanoswitch; nanotechnology; nanotransistor; quantum tunneling; subthreshold slope; subthreshold swing; CMOS technology; Carbon nanotubes; FETs; Geometry; MOSFET circuits; Nanoelectromechanical systems; Nanoscale devices; Performance gain; Relays; Switches; CMOS devices; Carbon nanotubes (CNTs); field-effect transistors (FETs); nanoelectromechanical systems (NEMS); nanorelay; nanoswitch; nanotechnology; nanotransistor; quantum tunneling; subthreshold slope; subthreshold swing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.886707

Filename

4016185