Gamma-ray irradiation and post-irradiation responses of high dose range RADFETs

Author

Jaksic, A. ; Ristic, G. ; Pejovic, M. ; Mohammadzadeh, A. ; Sudre, C. ; Lane, W.

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1356

Lastpage

1363

Abstract

Gamma-ray irradiation and post-irradiation responses have been studied for the two types of radiation sensitive p-channel MOSFETs (RADFETs) from different manufacturers. In addition to, in dosimetric applications standard, threshold voltage measurements at a single specified current, transistor I-V and charge-pumping characteristics have been monitored. This has been shown to be useful in providing a more detailed insight into processes that occur during irradiation and subsequent annealing at elevated temperature. In particular, the role of switching oxide traps (also known as "border" traps) and electron traps in studied devices has been revealed.

Keywords

MOSFET circuits; dosimeters; electron traps; gamma-ray effects; border traps; charge-pumping characteristics; dosimetric applications standard; electron traps; gamma-ray irradiation; high dose range RADFETs; post-irradiation responses; radiation sensitive p-channel MOSFETs; switching oxide traps; threshold voltage measurements; transistor I-V characteristics; Annealing; Charge pumps; Current measurement; Electron traps; MOSFETs; Manufacturing; Measurement standards; Monitoring; Threshold voltage; Voltage measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039667

Filename

1039667