Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors

Author

Martínez, C. ; Rafí, J.M. ; Lozano, M. ; Campabadal, F. ; Santander, J. ; Fonseca, L. ; Ullán, M. ; Moreno, A.

Author_Institution

Inst. de Microelectron., Univ. Autonoma de Barcelona, Spain

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1377

Lastpage

1382

Abstract

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors.

Keywords

annealing; elemental semiconductors; proton effects; radiation hardening; silicon radiation detectors; CERN; Si; annealing behavior; electrical properties degradation; fluence dependence; full depletion voltage; hardening; leakage current; nonoxygenated silicon detectors; oxygenated silicon detectors; proton irradiation; Annealing; Collaborative work; Degradation; Large Hadron Collider; Manufacturing; Protons; Radiation detectors; Radiation hardening; Silicon radiation detectors; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039670

Filename

1039670